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New Ceramic Substrate

Active Metal Brazing for Power Electronics

Up to 800µm on 0.25mm substrates

Active Metal Brazing (AMB) is the latest developments in ceramic substrates and offers the ability to produce Heavy Copper with a AlN (Aluminium Nitride) or SiN (Silicon Nitride). The normal metallisation process is not used as AMB involves brazing pure copper on the ceramic in a high temperature vacuum brazing process. As well as offering a high reliability substrate with unique heat dissipation. The brazing technology also enables double sided copper weights of up to 800µm on thin ceramic substrates of just 0.25mm

Ceramic Panel

Thick copper on a ceramic substrate with a thermal conductivity of up to 180 W/mK, high heat capacity and a low CTE make AMB ideal for Power Electronic applications.

  • Ceramics for power electronics
  • High temperature applications
  • Lower CTE (Coefficient of Thermal Expansion)
  • Possibility for Hermetic packages with 0% water absorption
  • Thermal conductivity of up to 180 W/mK

Ceramics - AMB (Active Metal Brazing)

  • Ceramics - AMB (Active Metal Brazing) is a new innovative way of producing Ceramic Substrates without metallisation.
  • In a high temperature vacuum AMB enables copper to be joined direct to the ceramic base.
  • A high reliability substrate with unique heat dissipation properties.
  • Brazing technology enables copper weights of up to 800µm on thin ceramic substrates.
  • Ideal for Power Electronics applications

AMB Single Sided

Various copper weights are available to meet match substrate thicknesses detailed in the table below. It is recommended the copper thickness on any design is no more than half the ceramic thickness.

AMB double sided

Double sided substrates offer greater mechanical strength and stability enabling Heavy Copper to be offered on thin ceramic substrates. The following is a guide on double sided material availability although during the etching process original copper weights can be reduced.

Active Metal Brazing Double Sided Panels
  200µm 250µm 300µm 400µm 500µm 800µm
0.25mm SiN
AlN		 SiN
AlN		 SiN SiN SiN SiN
0.32mm SiN SiN SiN SiN SiN SiN
0.38mm AlN AlN AlN      
0.63mm AlN AlN AlN AlN AlN  
1.00mm AlN AlN AlN AlN AlN AlN
Copper Thickness
Ceramic Thickness

Ceramic - Capabilities

Property AMD DPC DBC
Compatible Substrates AlN / SiN Al2O3 / AlN / SiN Al2O3 / AlN / SiN
Substrate Thickness (mm) 0.25/0.32/0.38/0.63/1.0mm.1.0 0.25/0.38/0.5/0.635.1.0/1.5/2.0 0.25/0.38/0.5/0.635.1.0/1.5/2.0
Copper Weight (oz) See Below 10 - 140 140 - 350
Panel Sizes (mm x mm) Standard: 115 x 115mm
Special: Up to 170 x 250mm		 Standard: 115 x 115mm
Special: Up to 170 x 250mm		 Standard: 115 x 115mm
Special: Up to 170 x 250mm
Finish Options ENIG/ENEPIG/EPIG/Immersion Silver/Immersion Tin/OSP ENIG/ENEPIG/EPIG/Immersion Silver/Immersion Tin/OSP ENIG/ENEPIG/EPIG/Immersion Silver/Immersion Tin/OSP
Min Track Width (mm) Dependant on Cu Weight 0.1 Dependant on Cu Weight
Minimum Hole Dia (mm) 0.08 0.08 0.08
Plated Via Aspect Ratio N/A 5:1 N/A

Note: Through hole plating is not possible with AMB or DBC substrates.

Click here for more information on AMB

Date : 08-07-2021

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